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IRFH8334PBF-1_15 PDF预览

IRFH8334PBF-1_15

更新时间: 2024-11-06 01:16:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 242K
描述
Compatible with Existing Surface Mount Techniques

IRFH8334PBF-1_15 数据手册

 浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第2页浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第3页浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第4页浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第5页浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第6页浏览型号IRFH8334PBF-1_15的Datasheet PDF文件第7页 
IRFH8334PbF-1  
HEXFET® Power MOSFET  
VDS  
30  
V
V
VGS max  
± 20  
RDS(on) max  
(@VGS = 10V)  
9.0  
m
Ω
(@VGS = 4.5V)  
13.5  
7.1  
Qg typ.  
nC  
A
PQFN 5X6 mm  
ID  
25  
(@Tc(Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converters  
Features  
Benefits  
Industry-standard pinout PQFN 5 x 6mm Package  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
IRFH8334TRPBF-1  
Form  
Tape and Reel  
Quantity  
IRFH8334PBF-1  
PQFN 5mm x 6mm  
4000  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
± 20  
14  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ TA = 25°C  
D
D
D
D
@ TA = 70°C  
12  
44  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
A
28  
Continuous Drain Current, VGS @ 10V (Source Bonding  
Technology Limited)  
Pulsed Drain Current  
25  
I
I
@ TC = 25°C  
D
100  
3.2  
30  
DM  
Power Dissipation  
Power Dissipation  
P
P
@TA = 25°C  
D
D
W
@TC(Bottom) = 25°C  
0.026  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Notes  through ‡ are on page 9  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
August 29, 2014  

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