5秒后页面跳转
IRFH8330PBF_15 PDF预览

IRFH8330PBF_15

更新时间: 2024-11-06 01:13:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 318K
描述
Compatible with Existing Surface Mount Techniques

IRFH8330PBF_15 数据手册

 浏览型号IRFH8330PBF_15的Datasheet PDF文件第2页浏览型号IRFH8330PBF_15的Datasheet PDF文件第3页浏览型号IRFH8330PBF_15的Datasheet PDF文件第4页浏览型号IRFH8330PBF_15的Datasheet PDF文件第5页浏览型号IRFH8330PBF_15的Datasheet PDF文件第6页浏览型号IRFH8330PBF_15的Datasheet PDF文件第7页 
IRFH8330PbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
VGS max  
± 20  
RDS(on) max  
(@VGS = 10V)  
6.6  
m
(@VGS = 4.5V)  
9.9  
9.3  
Qg typ.  
nC  
A
PQFN 5X6 mm  
ID  
25  
(@Tc(Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converters  
Synchronous MOSFET for high frequency buck converters  
FeaturesandBenefits  
Features  
Benefits  
Low Thermal Resistance to PCB (< 3.6°C/W)  
Low Profile (<1.2mm)  
Enable better thermal dissipation  
results in Increased Power Density  
Industry-Standard Pinout  
Multi-Vendor Compatibility  
Easier Manufacturing  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4000  
IRFH8330TRPBF  
IRFH8330TR2PBF  
PQFN 5mm x 6mm  
PQFN 5mm x 6mm  
400  
EOL notice #259  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
± 20  
17  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ TA = 25°C  
D
D
D
D
@ TA = 70°C  
14  
56  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
A
36  
Continuous Drain Current, VGS @ 10V (Source Bonding  
Technology Limited)  
Pulsed Drain Current  
25  
I
I
@ TC = 25°C  
D
210  
3.3  
35  
DM  
Power Dissipation  
Power Dissipation  
P
P
@TA = 25°C  
D
D
W
@TC(Bottom) = 25°C  
0.026  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Notes  through ‡ are on page 9  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
January 9, 2014  

与IRFH8330PBF_15相关器件

型号 品牌 获取价格 描述 数据表
IRFH8330TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
IRFH8334 INFINEON

获取价格

The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil
IRFH8334PBF INFINEON

获取价格

Control MOSFET for high frequency buck converters
IRFH8334PBF_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFH8334PBF-1 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFH8334PBF-1_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFH8334TR2PBF INFINEON

获取价格

Control MOSFET for high frequency buck converters
IRFH8334TRPBF INFINEON

获取价格

Control MOSFET for high frequency buck converters
IRFH8337PBF INFINEON

获取价格

Power Field-Effect Transistor, 12A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Me
IRFH8337PBF_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques