Datasheet > IRFH8325

IRFH8325

更新时间： 2024-11-06 14:56:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	245K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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数据手册

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IRFH8325 数据手册

IRFH8325PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

5.0

(@V_GS= 4.5V)

7.2

Q_{g typ}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 2.3°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Note

Base part number

Package Type

Form

Quantity

4000

IRFH8325TRPbF

IRFH8325TR2PbF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

@ T_C= 25°C

Pulsed Drain Current

100

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

0.029

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

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December 16, 2013

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