Datasheet > IRFH8324TR2PBF

IRFH8324TR2PBF

更新时间： 2024-11-20 12:48:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	237K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFH8324TR2PBF 数据手册

PD - 97651C

IRFH8324PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

4.1

(@V_GS= 4.5V)

6.3

Q_{g typ.}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 2.3°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH8324TRPBF

IRFH8324TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

200

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

0.029

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

www.irf.com

03/30/12

12 3 4 5 6 7...9

中文翻译

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IRFH8324TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH8324TRPBF	INFINEON	功能相似	HEXFETPower MOSFET

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