Datasheet > IRFH8321PBF

IRFH8321PBF

更新时间： 2024-11-06 01:11:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	238K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册

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IRFH8321PBF 数据手册

IRFH8321PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

(@V_GS= 4.5V)

4.9

m

6.8

Q_{g typ.}

19.4

I_D

PQFN5X6mm

(@T_c(Bottom)= 25°C)

Applications

Synchronous MOSFET for high frequency buck converters

Features

Benefits

Low Thermal Resistance to PCB (< 2.3°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility



Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

PQFN 5mm x 6mm

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH8321TRPBF

Absolute Maximum Ratings

Max.

Parameter

Gate-to-Source Voltage

Units

± 20

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

I_D@ T_C= 25°C

332

3.4

I_DM

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

0.027

Linear Derating Factor

Operating Junction and

W/°C

°C

-55 to + 150

T_J

T_STG

Storage Temperature Range

Notes through are on page 9

August 3, 2012

12 3 4 5 6 7...9

中文翻译

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