Datasheet > IRFH8311PBF

IRFH8311PBF

更新时间： 2024-11-10 01:22:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	265K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

获取价格

数据手册

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IRFH8311PBF 数据手册

IRFH8311PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

(@V_GS= 4.5V)

2.1

3.2

Q_{g typ.}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 1.3°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Base part number

Package Type

Orderable part number

Note

Form

Quantity

IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 4000

IRFH8311TRPBF

IRFH8311TR2PBF

IRFH8311TR2PBF PQFN 5mm x 6mm Tape and Reel

400

EOL notice #259

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

169

107

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

400

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

0.029

W/°C

°C

Operating Junction and

Storage Temperature Range

-55 to + 150

STG

Notes through are on page 9

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June 22,015

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