Datasheet > IRFH8316PBF_15

IRFH8316PBF_15

更新时间： 2024-11-30 01:22:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	285K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

获取价格

数据手册

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IRFH8316PBF_15 数据手册

IRFH8316PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

(@V_GS= 4.5V)

2.95

4.30

30.0

Q_{g typ}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

Features and Benefits

Features

Benefits

Low Thermal Resistance to PCB (< 1.7°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Orderable part number

Package Type

Note

Form

Quantity

4000

IRFH8316TRPBF

IRFH8316TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Max.

± 20

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

120

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

490

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

-55 to + 150

W/°C

°C

STG

Notes through are on page 9

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June 2, 2015

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