Datasheet > IRFH8303PBF_15

IRFH8303PBF_15

更新时间： 2024-11-06 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	536K
描述
Compatible with Existing Surface Mount Techniques

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFH8303PBF_15 数据手册

StrongIRFET™

IRFH8303PbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

Qg _(typical)

R_{G (typical)}

1.10

m

Ω

1.0

I_D

100

(@T_{C (Bottom)}= 25°C)

PQFN 5 x 6 mm

Applications

Control MOSFET for synchronous buck converter

Features

Benefits

Low R_DS(ON)(≤ 1.10 m)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg Tested

Lower Conduction Losses

Enable better Thermal Dissipation

Increased Reliability

Low Profile (≤ 0.9 mm)

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFH8303PbF

PQFN 5 mm x 6 mm

IRFH8303TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

280

177

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current

I_D@ T_C= 25°C

100

I_DM

400

3.7

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

156

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 9

www.irf.com

Submit Datasheet Feedback

March 17, 2015

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFH8303PBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRFH8303TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
IRFH8307PBF	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFH8307PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFH8307TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Me
IRFH8311	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil
IRFH8311PBF	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFH8311PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFH8311TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFH8316PBF	INFINEON	获取价格	Low Thermal Resistance to PCB
IRFH8316PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques