Datasheet > IRFH7914TR2PBF

IRFH7914TR2PBF

更新时间： 2024-11-26 21:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	245K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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数据手册
替代型号

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IRFH7914TR2PBF 数据手册

PD - 97336

IRFH7914PbF

HEXFET^®Power MOSFET

Applications

Control MOSFET of Sync-Buck Converters

used for Notebook Processor Power

Control MOSFET for Isolated DC-DC

V_DSS

30V

R_DS(on)max

8.7m @V = 10V

Ω

8.3nC

Converters in Networking Systems

Benefits

Very low R_DS(ON)at 4.5V V_GS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for R_G

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

PQFN

Large Source Lead for more reliable Soldering

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

110

3.1

2.0

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.025

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

7.2

Units

°C/W

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient

–––

Notes through ꢀ are on page 9

www.irf.com

07/15/08

12 3 4 5 6 7...9

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IRFH7914TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH7914TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 15A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Me

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