IRFH7923PBF

更新时间： 2024-11-26 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	216K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRFH7923PBF 数据手册

PD - 96139

IRFH7923PbF

HEXFET^®Power MOSFET

Applications

HighFrequencyPoint-of-LoadSynchronousBuck

Converter for Applications in Neworking &

Computing Systems

V_DSS

30V

R_DS(on)max

8.7m @V_GS= 10V

8.7nC

Optimized for Control FET Applications

Benefits

Very low R_DS(ON)at 4.5V V_GS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for R_G

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

PQFN

Large Source Lead for more reliable Soldering

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

120

3.0

1.9

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

8.3

Units

°C/W

R_θJC

R_θJA

–––

Notes through ꢀ are on page 9

www.irf.com

3/3/08

12 3 4 5 6 7...9

中文翻译

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