Datasheet > IRFH7911TR2PBF

IRFH7911TR2PBF

更新时间： 2024-11-23 12:03:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	325K
描述
Control and synchronous FET in one package

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中文翻译

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数据手册

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IRFH7911TR2PBF 数据手册

PD - 97427D

IRFH7911PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

8.6

8.3

3.0

I_D

(@T_A= 25°C)

Dual PQFN 5X6 mm

Applications

• Control and synchronous MOSFET for buck converters

Features and Benefits

Features

Benefits

Increased power density

(50% vs two PQFN 5x6)

Lower switching losses

Control and synchronous FET in one package

Low charge control MOSFET (8.3 nC typical)

Low R_DSonsynchronous MOSFET (< 3.0 mΩ)

100% Rg tested

Lower conduction losses

results in

⇒

Increased reliability

Low Profile (≤ 0.9 mm)

Increased power density

Easier manufacturing

Environmentally Friendlier

Increased reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL2, Consumer Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Quantity

IRFH7911TRPBF

IRFH7911TR2PBF

PQFN 5mm x 6mm

Tape and Reel

4000

400

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

2.4

1.5

230

3.4

2.2

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.019

0.027

W/°C

°C

T_J

-55 to + 150

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Q1 Max.

7.7

Q2 Max.

2.5

Units

Junction-to-Case

R_θJC

°C/W

Junction-to-Ambient

R_θJA

www.irf.com

07/11/12

12 3 4 5 6 7...10

中文翻译

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