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SI7840BDP PDF预览

SI7840BDP

更新时间: 2024-09-12 22:33:55
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威世 - VISHAY /
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Si7840BDP vs. Si7840DP Specification Comparison

SI7840BDP 数据手册

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SPICE Device Model Si7840BDP  
Vishay Siliconix  
N-Channel 30-V (D-S) Fast Switching MOSFET  
CHARACTERISTICS  
· N-Channel Vertical DMOS  
· Macro Model (Subcircuit Model)  
· Level 3 MOS  
· Apply for both Linear and Switching Application  
· Accurate over the - 55 to 125°C Temperature Range  
· Model the Gate Charge, Transient, and Diode Reverse Recovery  
Characteristics  
DESCRIPTION  
The attached spice model describes the typical electrical  
characteristics of the n-channel vertical DMOS. The subcircuit  
model is extracted and optimized over the - 55 to 125°C  
temperature ranges under the pulsed 0 to 10V gate drive. The  
saturated output impedance is best fit at the gate bias near the  
threshold voltage.  
A novel gate-to-drain feedback capacitance network is used to model  
the gate charge characteristics while avoiding convergence difficulties  
of the switched Cgd model. All model parameter values are optimized  
to provide a best fit to the measured electrical data and are not  
intended as an exact physical interpretation of the device.  
SUBCIRCUIT MODEL SCHEMATIC  
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate  
data sheet of the same number for guaranteed specification limits.  
Document Number: 73244  
04-Dec-04  
www.vishay.com  
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