SI7846DP-T1-E3

更新时间： 2024-09-13 12:14:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	148K
描述
N-Channel 150-V (D-S) MOSFET

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SI7846DP-T1-E3 数据手册

Si7846DP

Vishay Siliconix

N-Channel 150-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Definition

TrenchFET^®Power MOSFETS

0.050 at V_GS= 10 V

6.7

150

•

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07 mm Profile

PWM Optimized for Fast Switching

100 % R_gTested

•

PowerPAK SO-8

APPLICATIONS

•

Primary Side Switch for High Density DC/DC

Telecom/Server 48 V DC/DC

Industrial and 42 V Automotive

6.15 mm

5.15 mm

Bottom View

Ordering Information:

Si7846DP-T1-E3 (Lead (Pb)-free)

Si7846DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

150

24.5

19.5

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

6.7

5.4

4.0

3.3

Pulsed Drain Current

Avalanche Current

Continuous Source Current (Diode Conduction)^a

I_DM

I_AS

I_S

L = 0.1 mH

4.3

5.2

3.3

1.6

1.9

1.2

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

°C/W

Maximum Junction-to-Case (Drain)

R_thJC

1.5

1.8

Notes

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71442

S09-0537-Rev. F, 06-Apr-09

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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SI7846DP-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SI7430DP-T1-GE3	VISHAY	功能相似	Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
IRFH5215TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
IRFH5015TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

与SI7846DP-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SI7846DP-T1-GE3	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7848BDP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7848BDP-T1-E3	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7848DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7848DP-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7848DP-T1	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7848DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7850DP	VISHAY	获取价格	N-Channel 60-V (D-S) Fast Switching MOSFET
SI7850DP_09	VISHAY	获取价格	N-Channel 60-V (D-S) Fast Switching MOSFET
SI7850DP-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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