Datasheet > SI7850DP_09

SI7850DP_09

更新时间： 2024-09-13 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
11页	484K
描述
N-Channel 60-V (D-S) Fast Switching MOSFET

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SI7850DP_09 数据手册

Si7850DP

Vishay Siliconix

N-Channel 60-V (D-S) Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Available

TrenchFET^®Power MOSFETs

V_DS(V)

R_DS(on)(Ω)

I_D(A)

10.3

8.7

0.022 at V_GS= 10 V

0.031 at V_GS= 4.5 V

•

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07 mm Profile

•

PWM Optimized for Fast Switching

100 % R_gTested

PowerPAK SO-8

APPLICATIONS

•

Primary Side Switch for 24 V DC/DC Applications

6.15 mm

5.15 mm

•

Secondary Synchronous Rectifier

Bottom View

Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free)

Si7850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

10.3

7.5

6.2

4.5

1.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_S

Continuous Source Current

Pulsed Drain Current

Avalanche Current^b

Single Avalanche Energy^b

3.7

I_DM

I_AS

E_AS

T_A= 25 °C

T_A= 85 °C

4.5

2.3

1.8

0.9

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

R_thJA

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

2.6

3.3

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Guaranteed by design, not subject to production testing.

Document Number: 71625

S09-0227-Rev. E, 09-Feb-09

www.vishay.com

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