Datasheet > SI7846DP-T1

SI7846DP-T1

更新时间： 2024-09-12 22:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	64K
描述
N-Channel 150-V (D-S) MOSFET

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数据手册

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SI7846DP-T1 数据手册

Si7846DP

Vishay Siliconix

N-Channel 150-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

D PWM Optimized for Fast Switching

D 100% R_gTested

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

150

0.050 @ V = 10 V

6.7

APPLICATIONS

D Primary Side Switch for High Density DC/DC

D Telecom/Server 48-V DC/DC

D Industrial and 42-V Automotive

PowerPAK SO-8

6.15 mm

5.15 mm

N-Channel MOSFET

Bottom View

Ordering Information: Si7846DP-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

150

"20

= 25_C

= 70_C

6.7

5.4

4.0

3.3

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Avalanch Current

L = 0.1 mH

Continuous Source Current (Diode Conduction)

4.3

5.2

3.3

1.6

1.9

1.2

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

1.5

1.8

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71442

S-31728—Rev. B, 18-Aug-03

www.vishay.com

12 3 4 5

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