Datasheet > SI7844DP

SI7844DP

更新时间： 2024-09-12 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	48K
描述
Dual N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

技术参数
数据手册

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SI7844DP 技术参数

是否无铅：	含铅	生命周期：	Transferred
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

SI7844DP 数据手册

Si7844DP

Vishay Siliconix

New Product

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.022 @ V = 10 V

0.030 @ V = 4.5 V

8.5

PowerPAKt

5.15 mm

6.15 mm

Bottom View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

6.4

5.1

Continuous Drain Current (T = 150__C)

8.0

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.9

3.5

2.2

1.1

1.4

0.9

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

3.9

5.5

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71328

S-02456—Rev. A, 06-Nov-00

www.vishay.com

12 3 4

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