Datasheet > SI4906DY

SI4906DY

更新时间： 2024-09-18 12:18:23

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威世 - VISHAY		/
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描述
Dual N-Channel 40-V (D-S) MOSFET

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SI4906DY 数据手册

Si4906DY

Vishay Siliconix

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

Definition

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

0.039 at V_GS= 10 V

0.050 at V_GS= 4.5 V

6.6

5.8

•

N-Channel

6.6

APPLICATIONS

CCFL Inverter

•

SO-8

Top View

Ordering Information: Si4906DY-T1-E3 (Lead (Pb)-free)

Si4906DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

_A= 25 °C

6.6

5.3

Continuous Drain Current (T_J= 150 °C)

I_D

5.3^{b, c}

4.2^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

Pulsed Sorce-Drain Current

_C= 25 °C

_A= 25 °C

2.5

1.7^{b, c}

I_SM

I_AS

Single Pulse Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

E_AS

8.5

3.1

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

2^{b, c}

P_D

Maximum Power Dissipation

1.28^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Limit

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 73867

S09-2432-Rev. C, 16-Nov-09

www.vishay.com

12 3 4 5 6 7...10

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