Datasheet > SI4908DY

SI4908DY

更新时间： 2024-11-08 03:43:31

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威世 - VISHAY		/
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7页	105K
描述
Dual N-Channel 40-V (D-S) MOSFET

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SI4908DY 数据手册

Si4908DY

Vishay Siliconix

New Product

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)^a

Q_g(Typ)

D 100 % R_gTested

APPLICATIONS

RoHS

0.060 at V = 10 V

5.0

4.7

5.6

COMPLIANT

0.070 at V = 4.5 V

D CCFL Inverter

SO-8

Top View

Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"16

= 25 _C

= 70 _C

= 25 _C

= 70 _C

4.7

b, c

4.1

b, c

3.3

Continuous Drain Current (T = 150 _C)

Pulsed Drain Current (10 ms Pulse Width)

= 25 _C

2.3

b, c

1.5

Source-Drain Current Diode Current

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

2.5

2.75

1.75

T = 25 _C

T = 70 _C

Maximum Power Dissipation

b, c

= 25 _C

= 70 _C

1.85

b, c

1.18

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ

Max

Unit

b, d

Maximum Junction-to-Ambient

t v 10 sec

Steady-State

67.5

thJA

thJF

C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Based on T = 25 _C.

b. Surface Mounted on 1” x 1” FR4 Board.

c. t = 10 sec.

d. Maximum under steady state conditions is 120 _C/W.

Document Number: 73698

S–60218—Rev. A, 20-Feb-06

www.vishay.com

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