Datasheet > SI4904DY-T1-GE3

SI4904DY-T1-GE3

更新时间： 2024-09-18 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	242K
描述
Dual N-Channel 40-V MOSFET

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SI4904DY-T1-GE3 数据手册

Si4904DY

Vishay Siliconix

Dual N-Channel 40-V MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Available

TrenchFET^®Power MOSFET

100 % R_gTested

0.016 at V_GS= 10 V

0.019 at V_GS= 4.5 V

•

• UIS Tested

APPLICATIONS

• CCFL Inverter

SO-8

Top View

Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free)

Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

Unit

V_GS

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

8^{b, c}

6.5^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

I_DM

I_S

_C= 25 °C

2.7

1.6^{b, c}

T_A= 25 °C

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_SM

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.25

2.10

2.0^{b, c}

1.25^{b, c}

P_D

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typ.

Max.

62.5

Unit

t ≤ 10 s

Steady-State

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 120 °C/W.

Document Number: 73793

S09-0540-Rev. C, 06-Apr-09

www.vishay.com

12 3 4 5 6 7...10

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