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SI4900DY-T1-GE3 PDF预览

SI4900DY-T1-GE3

更新时间: 2024-09-18 20:00:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
9页 171K
描述
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

SI4900DY-T1-GE3 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:7.89
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):5.3 A
最大漏源导通电阻:0.058 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4900DY-T1-GE3 数据手册

 浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4900DY-T1-GE3的Datasheet PDF文件第7页 
Si4900DY  
Vishay Siliconix  
Dual N-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
5.3  
Available  
TrenchFET® Power MOSFET  
0.058 at VGS = 10 V  
0.072 at VGS = 4.5 V  
60  
13 nC  
4.7  
APPLICATIONS  
LCD TV CCFL Inverter  
SO-8  
D
1
D
2
S
G
S
D
D
D
D
1
1
2
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
1
G
2
Top View  
S
S
1
2
Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free)  
Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TC = 25 °C  
5.3  
4.3  
T
C = 70 °C  
A = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
4.3b, c  
T
3.4b, c  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (10 µs Width)  
20  
TC = 25 °C  
2.6  
Continuous Source-Drain Diode Current  
1.7b, c  
11  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0 1 mH  
TC = 25 °C  
EAS  
Single-Pulse Avalanche Energy  
6.1  
3.1  
2
mJ  
W
T
C = 70 °C  
A = 25 °C  
PD  
Maximum Power Dissipation  
2b, c  
T
1.3b, c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, d  
Symbol  
Typical  
Maximum  
62.5  
Unit  
RthJA  
55  
33  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
40  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 73272  
S09-0540-Rev. E, 06-Apr-09  
www.vishay.com  
1

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