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SI4892DY-T1-GE3 PDF预览

SI4892DY-T1-GE3

更新时间: 2024-09-18 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
8页 228K
描述
TRANSISTOR 8800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

SI4892DY-T1-GE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.8 A最大漏极电流 (ID):8.8 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI4892DY-T1-GE3 数据手册

 浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4892DY-T1-GE3的Datasheet PDF文件第7页 
Si4892DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
12.4  
9.6  
Available  
0.012 at VGS = 10 V  
0.020 at VGS = 4.5 V  
TrenchFET® Power MOSFETs  
High Efficiency PWM Optimized  
100 % Rg Tested  
30  
100 % UIS Tested  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET  
Top View  
Ordering Information: Si4892DY-T1-E3 (Lead (Pb)-free)  
Si4892DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
A = 70 °C  
12.4  
9.9  
8.8  
7.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
IDM  
IS  
Pulsed Drain Current  
50  
A
Continuous Source Current (Diode Conduction)a  
Avalanche Current  
2.60  
1.3  
IAS  
EAS  
20  
L = 0.1 mH  
TA = 25 °C  
Single-Pulse Avalanche Energy  
20  
mJ  
W
3.1  
2.0  
1.6  
1.0  
Maximum Power Dissipationa  
PD  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
34  
Maximum  
Unit  
t 10 s  
40  
80  
20  
Maximum Junction-to-Ambient (MOSFET)a  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
70  
°C/W  
RthJF  
17  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71407  
S09-0221-Rev. G, 09-Feb-09  
www.vishay.com  
1

SI4892DY-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI4892DY-T1-E3 VISHAY

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