是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 6.7 A | 最大漏源导通电阻: | 0.0165 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4896DY_06 | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI4896DY-T1 | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI4896DY-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 6700 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET | |
SI4896DY-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 6700 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI48D15-1000 | WALL |
获取价格 |
Analog Circuit, Hybrid, | |
SI48S12-2500 | WALL |
获取价格 |
Analog Circuit, Hybrid, | |
SI48S15-2000 | WALL |
获取价格 |
Analog Circuit, Hybrid, | |
SI4900DY | VISHAY |
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N-Channel 60-V (D-S) MOSFET | |
SI4900DY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal | |
SI4900DY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal |