Datasheet > SI4134DY-T1-E3

SI4134DY-T1-E3

更新时间： 2024-11-23 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	253K
描述
N-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI4134DY-T1-E3 数据手册

Si4134DY

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

Definition

0.014 at V_GS= 10 V

0.0175 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

7.3 nC

12.5

APPLICATIONS

•

DC/DC Conversion

SO-8

- Notebook System Power

Top View

Ordering Information: Si4134DY-T1-E3 (Lead (Pb)-free)

Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

11.2

9.9^{b, c}

7.9^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

4.1

2.0^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

11.25

T_C= 25 °C

_C= 70 °C

3.2

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

2.5^{b, c}

1.6^{b, c}

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

t  10 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

Document Number: 68999

S11-0650-Rev. C, 11-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SI4134DY-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SI4134DY-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SI4134T-BM	SILICON	获取价格	RF and Baseband Circuit, CMOS, 5 X 5 MM, QFN-32
SI4134T-BMR	SILICON	获取价格	RF and Baseband Circuit, CMOS, 5 X 5 MM, QFN-32
SI4134T-GM	SILICON	获取价格	RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32
SI4134T-GMR	SILICON	获取价格	RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32
SI4136	SILICON	获取价格	ISM RF SYNTHESIZER WITH INTEGRATED VCOS
SI4136_10	SILICON	获取价格	ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS
SI4136-BT	SILICON	获取价格	ISM RF SYNTHESIZER WITH INTEGRATED VCOS
SI4136DY	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI4136DY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 31A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-