Datasheet > Si4143DY

Si4143DY

更新时间： 2024-11-24 14:55:27

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威世 - VISHAY		/
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描述
P-Channel 30 V (D-S) MOSFET

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Si4143DY 数据手册

Si4143DY

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

V_DS(V)

R_DS(on)(Ω) MAX.

0.0062 at V_GS= -10 V

0.0074 at V_GS= -6 V

0.0092 at V_GS= -4.5 V

I_D(A) ^d

-25.3

-23.2

-20.8

Q_g(TYP.)

-30

54 nC

SO-8 Single

APPLICATIONS

• Adaptor switch, load switch

• Power management

• Notebook computers

Top View

P-Channel MOSFET

Ordering Information:

Si4143DY-T1-GE3 (lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

_A= 25 °C

-25.3

-20.2

-17.7 ^{a, b}

-14.1 ^{a, b}

-70

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

Pulsed Drain Current (t = 300 μs)

I_DM

I_S

_C= 25 °C

_A= 25 °C

-5

-2.4 ^{a, b}

Continuous Source-Drain Diode Current

Avalanche Current

L = 0.1 mH

I_AS

-30

Single Pulse Avalanche Energy

E_AS

_C= 25 °C

_C= 70 °C

_A= 25 °C

3.8

Maximum Power Dissipation

P_D

2.9 ^{a, b}

1.9 ^{a, b}

-55 to 150

T_A= 70 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{a, c}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

°C/W

Maximum Junction-to-Foot

Steady State

R_thJF

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 84 °C/W.

d. Based on T_C= 25 °C.

S14-0910-Rev. A, 28-Apr-14

Document Number: 63242

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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