Datasheet > SI4178DY-T1-GE3

SI4178DY-T1-GE3

更新时间： 2024-01-24 10:57:22

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威世 - VISHAY		/
页数	文件大小	规格书
10页	278K
描述
N-Channel 30-V (D-S) MOSFET

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SI4178DY-T1-GE3 数据手册

New Product

Si4178DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

12^a

0.021 at V_GS= 10 V

0.033 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

3.7 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook System Power

Low Current DC/DC

SO-8

Top View

Ordering Information:

Si4178DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

12^a

9.7^a

8.3^{b, c}

6.7^{b, c}

4.2

2^{b, c}

3.2

2.4^{b, c}

1.5^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

R_thJA

R_thJF

°C/W

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 65718

S10-0212-Rev. A, 25-Jan-10

www.vishay.com

12 3 4 5 6 7...10

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SI4178DY-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SI4346DY-T1-E3	VISHAY	类似代替	N-Channel 30-V (D-S) MOSFET

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