是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFN | 包装说明: | HVQCCN, LCC32,.2SQ,20 |
针数: | 32 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.83 |
JESD-30 代码: | S-XQCC-N32 | JESD-609代码: | e0 |
长度: | 5 mm | 功能数量: | 1 |
端子数量: | 32 | 最高工作温度: | 85 °C |
最低工作温度: | -20 °C | 封装主体材料: | UNSPECIFIED |
封装代码: | HVQCCN | 封装等效代码: | LCC32,.2SQ,20 |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | 240 | 电源: | 2.7/3 V |
认证状态: | Not Qualified | 座面最大高度: | 0.9 mm |
子类别: | Other Telecom ICs | 标称供电电压: | 2.85 V |
表面贴装: | YES | 技术: | CMOS |
电信集成电路类型: | RF AND BASEBAND CIRCUIT | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4200DB-BMR | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, QFN-32 | |
SI4200DB-GM | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4200DB-GMR | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4200DY | VISHAY |
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Dual N-Channel 25 V (D-S) MOSFET | |
SI4200DY-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 8A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-o | |
SI4200-G-GM | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4200-G-GMR | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4200-GM | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4200-GMR | SILICON |
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RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32 | |
SI4201-BMR | SILICON |
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RF and Baseband Circuit, CMOS, 4 X 4 MM, QFN-20 |