Datasheet > SI4204DY

SI4204DY

更新时间： 2024-11-15 09:26:07

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描述
Dual N-Channel 20 V MOSFET

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SI4204DY 数据手册

Si4204DY

Vishay Siliconix

Dual N-Channel 20 V MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

19.8^a

17.3^a

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.0046 at V_GS= 10 V

0.006 at V_GS= 4.5 V

•

14.5

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

SO-8

•

DC/DC Converter

Fixed Telecom

• Notebook PC

Top View

Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

19.8

15.9

Continuous Drain Current (T_J= 150 °C)

I_D

15.5^{b, c}

12.2^{b, c}

T_A= 70 °C

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

I_DM

I_S

T_C= 25 °C

2.7

1.6^{b, c}

_A= 25 °C

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_SM

I_AS

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.25

2.10

Maximum Power Dissipation

P_D

2.0^{b, c}

1.25^{b, c}

- 55 to 150

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typ.

Max.

62.5

Unit

R_thJA

R_thJF

t ≤ 10 s

Steady-State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 120 °C/W.

Document Number: 65154

S10-1042-Rev. A, 03-May-10

www.vishay.com

12 3 4 5 6 7...10

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