Datasheet > SI4202DY

SI4202DY

更新时间： 2024-11-15 09:26:07

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威世 - VISHAY		/
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描述
Dual N-Channel 30 V (D-S) MOSFET

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SI4202DY 数据手册

Si4202DY

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

12.1

Q_g(Typ.)

Definition

0.014 at V_GS= 10 V

0.017 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

5.4 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Synchronous Buck

- Notebooks

- Servers

SO-8

- STB

Top View

N-Channel MOSFET N-Channel MOSFET

Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

12.1

Continuous Drain Current (T_J= 150 °C)

I_D

9.7^{a, b}

T_A= 25 °C

8.2^{a, b}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

3.1

Continuous Source Drain Diode Current

2^{a, b}

I_AS

Avalanche Current

L = 0 1 mH

T_C= 25 °C

E_AS

Single-Pulse Avalanche Energy

11.25

3.7

_C= 70 °C

_A= 25 °C

2.6

P_D

Maximum Power Dissipation

2.4^{a, b}

1.7^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

62.5

Unit

Maximum Junction-to-Ambient^{a, c}

Maximum Junction-to-Foot (Drain)

t  10 s

°C/W

R_thJF

Steady State

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

Document Number: 67092

S10-2602-Rev. A, 15-Nov-10

www.vishay.com

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