Datasheet > Si4190BDY

Si4190BDY

更新时间： 2024-11-16 14:54:07

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威世 - VISHAY		/
页数	文件大小	规格书
7页	186K
描述
N-Channel 100 V (D-S) MOSFET

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Si4190BDY 数据手册

Si4190BDY

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

SO-8 Single

• TrenchFET^®Gen IV power MOSFET

• Very low R_DSx Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DSx Q_ossFOM

• Logic level gate drive

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

• Synchronous rectification

• Primary side switch

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

• DC/DC converter

100

0.093

0.0103

• Motor drive switch

• LED driver

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

I_D(A)

• Load switch

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SO-8

Si4190BDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

13.6

12 ^{b, c}

9.6 ^{b, c}

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

130

5.4

2.7 ^{b, c}

T_C= 25 °C

T_A= 25 °C

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

8.4

5.9

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

3.8 ^{b, c}

3.0 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 85 °C/W

S22-1019-Rev. A, 12-Dec-2022

Document Number: 62152

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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