Datasheet > SI4190ADY

SI4190ADY

更新时间： 2024-11-15 12:22:35

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描述
N-Channel 100 V (D-S) MOSFET

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Si4190ADY

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Material categorization:

V_DS(V)

R_DS(on)() Max.

0.0088 at V_GS= 10 V

0.0094 at V_GS= 7.5 V

0.0120 at V_GS= 4.5 V

I_D(A)^a

18.4

Q_g(Typ.)

For definitions of compliance please see

www.vishay.com/doc?99912

100

20.7 nC

17.8

15.8

APPLICATIONS

SO-8

•

DC/DC Primary Side Switch

Telecom/Server

Industrial

Top View

Ordering Information:

Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

18.4

14.6

13^{b, c}

10.3^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

5.4

2.7^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

3.8

3^{b, c}

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

1.9^{b, c}

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

t  10 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

Document Number: 63826

S12-0541-Rev. A, 12-Mar-12

For technical support, please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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