Datasheet > SI4186DY

SI4186DY

更新时间： 2024-09-30 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	273K
描述
N-Channel 20-V (D-S) MOSFET

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SI4186DY 数据手册

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Si4186DY

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

35.8

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.0026 at V_GS= 10 V

0.0032 at V_GS= 4.5 V

•

28.7 nC

32.2

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

OR-ing

DC-DC Low-Side Switch

SO-8

Top View

Ordering Information: Si4186DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

35.8

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

26.5

Continuous Drain Current (T_J= 150 °C)

I_D

25.3^{b, c}

20.1^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

5.4

2.7^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

L = 0.1 mH

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

I_AS

Single Pulse Avalanche Current

Avalanche Energy

E_AS

6.0

3.3

P_D

Maximum Power Dissipation

3.0^{b, c}

1.9^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 65152

S09-1532-Rev. A, 10-Aug-09

www.vishay.com

12 3 4 5 6 7...10

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