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SI4346DY-T1-E3 PDF预览

SI4346DY-T1-E3

更新时间: 2024-11-14 22:43:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 90K
描述
N-Channel 30-V (D-S) MOSFET

SI4346DY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.13配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5.9 A
最大漏源导通电阻:0.023 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4346DY-T1-E3 数据手册

 浏览型号SI4346DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4346DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4346DY-T1-E3的Datasheet PDF文件第4页浏览型号SI4346DY-T1-E3的Datasheet PDF文件第5页浏览型号SI4346DY-T1-E3的Datasheet PDF文件第6页 
Si4346DY  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Gen II Power MOSFET  
PRODUCT SUMMARY  
D 100% Rg Tested  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
Qg (Typ)  
0.023 @ V = 10 V  
8
GS  
D High-Side DC/DC Conversion  
0.025 @ V = 4.5 V  
7.5  
6.8  
6.0  
GS  
30  
6.5  
Notebook  
0.030 @ V = 3.0 V  
GS  
Desktop  
Server  
0.036 @ V = 2.5 V  
GS  
D Notebook Logic DC/DC, Low-Side  
SO-8  
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4346DY—E3  
Si4346DY-T1—E3 ( with Tape and Reel)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
30  
V
"12  
T
= 25_C  
= 70_C  
8
5.9  
4.7  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
6.5  
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.2  
2.5  
1.6  
1.20  
1.31  
0.84  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
43  
74  
22  
50  
95  
27  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72958  
S-41793—Rev. B, 04-Oct-04  
www.vishay.com  
1

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