Datasheet > SI4348DY-E3

SI4348DY-E3

更新时间： 2024-09-25 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	70K
描述
N-Channel 30-V (D-S) MOSFET

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SI4348DY-E3 数据手册

Si4348DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Gen II Power MOSFET

APPLICATIONS

PRODUCT SUMMARY

D High-Side DC/DC Conversion

V_DS(V)

r_DS(on)(W)

I_D(A)

− Notebook

0.0125 @ V = 10 V

− Desktop

− Server

0.014 @ V = 4.5 V

D Notebook Logic DC/DC, Low-Side

SO-8

Top View

Ordering Information: Si4348DY—E3 (Lead Free)

Si4348DY-T1—E3 (Lead Free with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

8.0

6.5

Continuous Drain Current (T = 150__C)

8.9

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.2

2.5

1.6

1.20

1.31

0.84

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72790

S-40438—Rev. A, 15-Mar-04

www.vishay.com

12 3 4 5

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