是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G14 | 针数: | 14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 7.3 A |
最大漏极电流 (ID): | 7.3 A | 最大漏源导通电阻: | 0.012 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G14 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 14 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4354DY | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI4354DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4354DY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI4354DY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI4355 | SILICON |
获取价格 |
EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER | |
Si4356 | SILICON |
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Si4356 EZRadioPRO ISM 波段采用 QFN20 封装。 | |
SI4356ADY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | ||
SI4356ADY-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 17 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM | |
SI4356-B1A-FM | SILICON |
获取价格 |
Audio Single Chip Receiver | |
SI4356-B1A-FMR | SILICON |
获取价格 |
Audio Single Chip Receiver |