Datasheet > SI4362-BXX-FM

SI4362-BXX-FM

更新时间： 2024-09-26 19:53:19

品牌	Logo	应用领域
芯科 - SILICON		电信电信集成电路
页数	文件大小	规格书
46页	296K
描述
Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20

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SI4362-BXX-FM 技术参数

生命周期：	Active	包装说明：	HVQCCN,
Reach Compliance Code：	unknown	HTS代码：	8542.39.00.01
风险等级：	5.62	JESD-30 代码：	S-XQCC-N20
长度：	4 mm	功能数量：	1
端子数量：	20	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	UNSPECIFIED
封装代码：	HVQCCN	封装形状：	SQUARE
封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	座面最大高度：	0.9 mm
标称供电电压：	3.3 V	表面贴装：	YES
电信集成电路类型：	TELECOM CIRCUIT	温度等级：	INDUSTRIAL
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	QUAD	宽度：	4 mm
Base Number Matches：	1

SI4362-BXX-FM 数据手册

Si4362

HIGH-PERFORMANCE, LOW-CURRENT RECEIVER

Features

 Frequency

 Excellent selectivity performance

range = 142–1050 MHz

60 dB adjacent channel

75 dB blocking at 1 MHz

 Antenna diversity and T/R switch

control

 Receive sensitivity = –126 dBm

 Modulation

(G)FSK, 4(G)FSK, (G)MSK

OOK and ASK

 Highly configurable packet handler

 Low active power consumption  RX 64 byte FIFOs

10/13 mA RX

 Auto frequency control (AFC)

 Automatic gain control (AGC)

 Low BOM

 Ultra low current powerdown

modes

30 nA shutdown, 50 nA standby

 Data rate = 100 bps to 1 Mbps

 Low battery detector

 Temperature sensor

 20-Pin QFN package

Pin Assignments

 Fast wake and hop times

 Power supply = 1.8 to 3.6 V

20 19 18 17

SDN

RXp

RXn

Applications

15 nSEL

14 SDI

13 SDO

12 SCLK

11 nIRQ

 Smart metering (802.15.4g and MBus)  Remote keyless entry

GND

PAD

 Remote control

 Home automation

 Industrial control

 Sensor networks

 Health monitors

 Home security and alarm

 Telemetry

 Garage and gate openers

 Electronic shelf labels

Description

Silicon Labs Si4362 devices are high-performance, low-current receivers

covering the sub-GHz frequency bands from 142 to 1050 MHz. The

radios are part of the EZRadioPRO family, which includes a complete

Patents pending

line of transmitters, receivers, and transceivers covering a wide range of

applications. All parts offer outstanding sensitivity of –126 dBm while

achieving extremely low active and standby current consumption. The

60 dB adjacent channel selectivity with 12.5 kHz channel spacing

ensures robust receive operation in harsh RF conditions, which is

particularly important for narrowband operation. RX current of 10 mA

coupled with extremely low standby current and fast wake times ensure

extended battery life in the most demanding applications. The devices are

compliant with all worldwide regulatory standards: FCC, ETSI, and ARIB.

Rev 0.4 2/13

Si4362

12 3 4 5 6 7...46

中文翻译

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SI4362DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
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SI4362DY-T1E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
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SI4364DY-T1-GE3	VISHAY	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
SI4366DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4366DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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