SI4362DY-T1

更新时间： 2024-02-19 10:43:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	53K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

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数据手册

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SI4362DY-T1 数据手册

Si4362DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

D Optimized for “Low Side” Synchronous

PRODUCT SUMMARY

Rectifier Operation

D 100% R_gTested

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.0045 @ V = 10 V

0.0055 @ V = 4.5 V

D DC/DC Converters

D Synchronous Rectifiers

SO-8

Top View

Ordering Information: Si4362DY

Si4362DY-T1 (with Tape and Reel)

Si4362DY—E3 (Lead Free)

Si4362DY-T1—E3 (Lead Free with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

2.9

= 25_C

= 70_C

3.5

Maximum Power Dissipation

2.2

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

thJA

thJF

C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec

Document Number: 71628

S-40762—Rev. E, 19-Apr-04

www.vishay.com

12 3 4

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