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SI4368DY-E3 PDF预览

SI4368DY-E3

更新时间: 2024-01-19 20:40:50
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
5页 71K
描述
N-Channel Reduced Qg, Fast Switching WFET

SI4368DY-E3 数据手册

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Si4368DY  
Vishay Siliconix  
New Product  
N-Channel Reduced Qg, Fast Switching WFETt  
FEATURES  
PRODUCT SUMMARY  
D Extremely Low Qgd WFET Technology for  
Switching Losses Improvement  
D TrenchFETr Gen II Power MOSFET  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0032 @ V = 10 V  
25  
22  
GS  
30  
0.0036 @ V = 4.5 V  
GS  
APPLICATIONS  
D Low-Side DC/DC Conversion  
Notebook, Server, VRM Module  
D Fixed Telecom  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4368DY—E3  
Si4368DY-T1—E3 (Lead Free with Tape and Reel)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"12  
T
= 25_C  
= 70_C  
25  
20  
17  
13  
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)  
Continuous Source Current (Diode Conduction)  
Avalanch Current  
I
70  
50  
A
DM  
a
I
S
2.9  
1.3  
L= 0.1 mH  
i
AS  
T
= 25_C  
= 70_C  
3.5  
2.2  
1.6  
1
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
29  
67  
13  
35  
80  
16  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72704  
S-40105—Rev. A, 02-Feb-04  
www.vishay.com  
1

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