Datasheet > SI4386DY-E3

SI4386DY-E3

更新时间： 2024-01-12 02:08:37

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	76K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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技术参数
数据手册

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SI4386DY-E3 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	配置：	Single
最大漏极电流 (Abs) (ID)：	11 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3.1 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

SI4386DY-E3 数据手册

Si4386DY

Vishay Siliconix

New Product

N-Channel Reduced Q_g, Fast Switching MOSFET

FEATURES

D TrenchFETr Gen II Power MOSFETS

PRODUCT SUMMARY

D PWM Optimized

D 100% R_gTested

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

0.007 @ V = 10 V

D DC/DC Conversion for PC

0.0095 @ V = 4.5 V

13.5

SO-8

Top View

Ordering Information: Si4386DY—E3

Si4386DY-T1—E3 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

"50

Continuous Source Current (Diode Conduction)

2.8

3.1

1.3

= 25_C

= 70_C

1.47

0.95

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient (MOSFET)

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 73109

S-41815—Rev. A, 11-Oct-04

www.vishay.com

12 3 4 5

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