Datasheet > SI4396DY

SI4396DY

更新时间： 2024-09-28 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
7页	114K
描述
N-Channel 30-V (D-S) MOSFET with Schottky Diode

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SI4396DY 数据手册

Si4396DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

• TrenchFET^®Power MOSFET

• 100 % R_gand UIS Tested

I_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.0115 at V_GS= 10 V

0.016 at V_GS= 4.5 V

RoHS

13.3 nC

12.7

COMPLIANT

APPLICATIONS

• Notebook Logic DC/DC

- Low Side

SCHOTTKY AND BODY DIODE PRODUCT

SUMMARY

_SD(V)

V_DS(V)

_S(A)

Diode Forward Voltage

5^a

0.4 at 2 A

SO-8

Schottky Diode

N-Channel MOSFET

Top View

Ordering Information: Si4396DY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

12.7

12.3^{b, c}

9.7^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

2.8^{b, c}

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

E_AS

L = 0.1 mH

5.4

3.4

3.1^{b, c}

2.0^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

- 55 to 150

°C

Typ

Max

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

R_thJF

Unit

t ≤ 10 sec

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 74252

S-61223-Rev. A, 17-Jul-06

www.vishay.com

12 3 4 5 6 7

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