Datasheet > SI4401BDY_13

SI4401BDY_13

更新时间： 2024-02-26 05:57:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	254K
描述
P-Channel 40-V (D-S) MOSFET

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SI4401BDY_13 数据手册

Si4401BDY

Vishay Siliconix

P-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 10.5

- 8.7

Q_g(Typ.)

Definition

0.014 at V_GS= - 10 V

0.021 at V_GS= - 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

- 40

Compliant to RoHS Directive 2002/95/EC

SO-8

Top View

Ordering Information:

Si4401BDY-T1-E3 (Lead (Pb)-free)

Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

- 40

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

- 10.5

- 8.3

- 8.7

- 5.9

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 50

Continuous Source Current (Diode Conduction)^a

Avalanche Current

- 2.6

- 1.36

I_AS

E_AS

L = 1 mH

Single Pulse Avalanche Energy

T_A= 25 °C

T_A= 70 °C

2.9

1.5

Maximum Power Dissipation^a

P_D

1.85

0.95

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 73140

S09-0866-Rev. D, 18-May-09

www.vishay.com

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