Si4403DDY
Vishay Siliconix
www.vishay.com
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
SO-8 Single
D
5
D
6
• 1.8 V rated RDS(on)
D
7
D
8
• 100% Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
4
G
3
S
APPLICATIONS
• Adapter switch
• Load switch
S
2
S
Top View
• DC/DC converters
G
PRODUCT SUMMARY
VDS (V)
-20
• High speed switching
RDS(on) max. () at VGS = -4.5 V
0.0140
0.0200
0.0300
39
• Power
battery-operated, mobile and
wearable devices
management
in
R
R
DS(on) max. () at VGS = -2.5 V
DS(on) max. () at VGS = -1.8 V
P-Channel MOSFET
Qg typ. (nC)
D (A)
D
I
-15.4 e
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SO-8
Si4403DDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
8
T
C = 25 °C
-15.4 e
-12.3
-10.9 b, c
-8.7 b, c
-32 a
TC = 70 °C
TA =25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
ID
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
-4.2
-2 b, c
Continuous source-drain diode current
TA = 70 °C
T
C = 25 °C
C = 70 °C
5
T
3.2
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
2.4 b, c
1.5 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 10 s
41
20
52
25
°C/W
Maximum junction-to-foot (drain)
Notes
Steady state
RthJF
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 100 °C/W
e. TC = 25 °C
S17-0318-Rev. A, 27-Feb-17
Document Number: 70094
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000