Datasheet > SI4403DY-T1

SI4403DY-T1

更新时间： 2024-10-01 10:10:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	62K
描述
Small Signal Field-Effect Transistor, 6.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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SI4403DY-T1 数据手册

Si4403DY

Vishay Siliconix

New Product

P-Channel 1.8-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.017 @ V = –4.5 V

–9

–7

–6

D Load Switch

– Game Stations

– Notebooks

– Desktops

–20

0.023 @ V = –2.5

0.032 @ V = –1.8

SO-8

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

= 25_C

= 70_C

–6.5

–5.0

–9

–7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–30

continuous Source Current (Diode Conduction)

–2.1

2.5

–1.3

1.35

0.87

= 25_C

= 70_C

Maximum Power Dissipation

1.6

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71683

S-04393—Rev. A, 13-Aug-01

www.vishay.com

12 3 4 5

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