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SI4408DY

更新时间: 2024-11-22 22:33:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 42K
描述
N-Channel 20-V (D-S) MOSFET

SI4408DY 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.37
配置:Single最大漏极电流 (Abs) (ID):14 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI4408DY 数据手册

 浏览型号SI4408DY的Datasheet PDF文件第2页浏览型号SI4408DY的Datasheet PDF文件第3页浏览型号SI4408DY的Datasheet PDF文件第4页 
Si4408DY  
Vishay Siliconix  
New Product  
N-Channel 20-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D PWM Optimized for Fast Switching  
D Low Switching Losses  
D Low Gate Drive Losses  
D 100% RG Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0045 @ V = 10 V  
21  
17  
GS  
20  
0.0068 @ V = 4.5 V  
GS  
APPLICATIONS  
D Self-Driven Synchronous Rectification  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
21  
17  
14  
11  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.9  
3.5  
2.2  
1.3  
1.6  
1
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
29  
67  
13  
35  
80  
16  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 70687  
S-03662—Rev. B, 14-Apr-03  
www.vishay.com  
1

SI4408DY 替代型号

型号 品牌 替代类型 描述 数据表
SI4408DY-T1-GE3 VISHAY

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