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SI4410DY PDF预览

SI4410DY

更新时间: 2024-09-28 03:43:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 96K
描述
HEXFET Power MOSFET

SI4410DY 数据手册

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PD - 91853C  
Si4410DY  
HEXFET® Power MOSFET  
l N-Channel MOSFET  
l Low On-Resistance  
l Low Gate Charge  
l Surface Mount  
A
A
D
1
2
3
4
8
S
S
VDSS = 30V  
7
D
6
S
D
l Logic Level Drive  
5
G
D
RDS(on) = 0.0135Ω  
Top View  
Description  
This N-channel HEXFET® Power MOSFET is produced  
using International Rectifier's advanced HEXFET power  
MOSFET technology. The low on-resistance and low gate  
charge inherent to this technology make this device ideal  
for low voltage or battery driven power conversion  
applications  
The SO-8 package with copper leadframe offers enhanced  
thermal characteristics that allow power dissipation of  
greater that 800mW in typical board mount applications.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
30  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
±10  
±8.0  
A
±50  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
2.5  
W
1.6  
Linear Derating Factor  
0.02  
W/°C  
V/ns  
mJ  
dv/dt  
EAS  
Peak Diode Recovery dv/dt ꢀ  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
5.0  
400  
VGS  
± 20  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
11/22/99  

SI4410DY 替代型号

型号 品牌 替代类型 描述 数据表
SI4410DYTR INFINEON

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Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
SI4410DYTRPBF INFINEON

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N-Channel MOSFET
SI4410DYPBF INFINEON

类似代替

HEXFET㈢Power MOSFET

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SI4410DY-T1 VISHAY

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SI4410DY-T1-REVA VISHAY

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SI4410DYTR INFINEON

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Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-