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SI4410DYF011 PDF预览

SI4410DYF011

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
6页 410K
描述
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI4410DYF011 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.14配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4410DYF011 数据手册

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May 1999  
Si4410DY*  
â
Single N-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V  
RDS(ON) = 0.020 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
• High power and current handling capability.  
• Battery switch  
• Load switch  
• Motor controls  
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1999 Fairchild Semiconductor Corporation  
Si4410DY Rev. B  

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