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SI4410DYPBF PDF预览

SI4410DYPBF

更新时间: 2024-09-28 03:10:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管光电二极管
页数 文件大小 规格书
8页 119K
描述
HEXFET㈢Power MOSFET

SI4410DYPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.92
Base Number Matches:1

SI4410DYPBF 数据手册

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PD - 95168  
Si4410DYPbF  
HEXFET® Power MOSFET  
l N-Channel MOSFET  
l Low On-Resistance  
l Low Gate Charge  
l Surface Mount  
l Logic Level Drive  
l Lead-Free  
A
A
D
1
2
3
4
8
S
S
S
G
VDSS = 30V  
7
D
6
D
5
D
RDS(on) = 0.0135Ω  
Description  
Top View  
This N-channel HEXFET® Power MOSFET is  
produced using International Rectifier's advanced  
HEXFET power MOSFET technology. The low on-  
resistance and low gate charge inherent to this  
technology make this device ideal for low voltage or  
battery driven power conversion applications  
The SO-8 package with copper leadframe offers  
enhanced thermal characteristics that allow power  
dissipation of greater that 800mW in typical board  
mount applications.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
30  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
±10  
±8.0  
A
±50  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
2.5  
W
1.6  
Linear Derating Factor  
0.02  
W/°C  
V/ns  
mJ  
dv/dt  
EAS  
Peak Diode Recovery dv/dt ꢀ  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
5.0  
400  
VGS  
± 20  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
09/22/04  

SI4410DYPBF 替代型号

型号 品牌 替代类型 描述 数据表
SI4410DYTRPBF INFINEON

类似代替

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HEXFET Power MOSFET
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Single N-Channel Logic Level PowerTrench MOSFET

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