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SI4412ADY-T1-GE3 PDF预览

SI4412ADY-T1-GE3

更新时间: 2024-01-06 12:23:10
品牌 Logo 应用领域
威世 - VISHAY 脉冲光电二极管晶体管
页数 文件大小 规格书
5页 111K
描述
TRANSISTOR 5.8 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

SI4412ADY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5.8 A
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:YES
端子面层:PURE MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

SI4412ADY-T1-GE3 数据手册

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Si4412ADY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
8
Definition  
0.024 at VGS = 10 V  
0.035 at VGS = 4.5 V  
TrenchFET® Power MOSFETs  
30  
6.6  
Compliant to RoHS Directive 2002/95/EC  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free)  
Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
30  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
8
5.8  
4.6  
Continuous Drain Current (TJ = 150 °C)a  
ID  
6.4  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
Continuous Source Current (Diode Conduction)a  
2.3  
2.5  
1.6  
1.2  
1.3  
0.8  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
45  
Maximum  
Unit  
t 10 s  
50  
95  
20  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot  
RthJA  
Steady State  
Steady State  
80  
°C/W  
RthJF  
16  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71105  
S09-0868-Rev. C, 18-May-09  
www.vishay.com  
1

SI4412ADY-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI4412ADY-T1 VISHAY

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