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SI4410DY PDF预览

SI4410DY

更新时间: 2024-09-28 12:32:23
品牌 Logo 应用领域
TYSEMI 晶体栅极开关晶体管光电二极管
页数 文件大小 规格书
2页 269K
描述
RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.

SI4410DY 数据手册

 浏览型号SI4410DY的Datasheet PDF文件第2页 
MOSFET  
I
C
II  
CC  
Product specification  
SI4410DY  
SOP-8  
Features  
RDS(ON)0.0135Ω @VGS=10V  
RDS(ON)0.02Ω @VGS=4.5V  
Low gate charge.  
D
D
D
D
S
S
S
G
Fast switching speed.  
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
Unit  
V
30  
±20  
10  
Gate-Source Voltage  
VGS  
ID  
V
Drain-Current  
-Continuous  
-Pulsed  
(NOTE 1)  
(NOTE 2)  
(NOTE 1)  
A
IDM  
50  
A
Power Dissipation  
PD  
2.5  
W
Thermal Resistance,Junction- to-Ambient  
Operating Junction and Storage Temperature Range  
RθJA  
Tj.Tstg  
50  
/W  
-55 to 150  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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