Datasheet > SI4401BDY

SI4401BDY

更新时间： 2024-09-29 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	355K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-16.1A;Vgs(th)(V):±20;漏源导通电阻:18mΩ@-10V

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SI4401BDY 数据手册

UMW

SI4401

P-Channel MOSFET

PRODUCT SUMMARY

VDS (V) =-40V

18m

29m

(VGS

-10V)

RDS(ON)

-4.5V)

RDS(ON)

APPLICATIONS

•

Load Switch

POL

SOP-8

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 40

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_C= 25 °C

T_C= 70 °C

- 16.1

- 12.9

Continuous Drain Current (T_J= 150 °C)

I_D

- 10.2^{b, c}

- 8.2^{b, c}

- 50

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

- 5.3

- 2.1^{b, c}

Continous Source-Drain Diode Current

T_A= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

- 28

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

6.3

Maximum Power Dissipation

P_D

2.5^{b, c}

1.6^{b, c}

- 55 to 150

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t  10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

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