SI4392DY-E3

更新时间： 2024-01-29 06:02:59

品牌	Logo	应用领域
威世 - VISHAY		晶体开关晶体管功率场效应晶体管
页数	文件大小	规格书
5页	56K
描述
N-Channel Reduced Qg, Fast Switching WFET

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技术参数
数据手册

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SI4392DY-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.83	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	12.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	3 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

SI4392DY-E3 数据手册

Si4392DY

Vishay Siliconix

N-Channel Reduced Q_g, Fast Switching WFETt

FEATURES

D Extremely Low Q_gdWFET Technology for

Switching Losses

D TrenchFETr Power MOSFET

D 100% R_gTested

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.00975 @ V = 10 V

12.5

10.0

D High-Side DC/DC Conversion

0.01375 @ V = 4.5 V

− Notebook

− Server

SO-8

Top View

Ordering Information: Si4392DY

Si4392DY-T1 (with Tape and Reel)

Si4392DY—E3 (Lead (Pb)-Free)

Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

12.5

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.7

= 25_C

= 70_C

3.0

Maximum Power Dissipation

1.9

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Typical

Maximum

Unit

Maximum Junction-to-Ambient

thJA

C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec

Document Number: 72151

S-41427—Rev. D, 26-Jul-04

www.vishay.com

12 3 4 5

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